Abstract
GaN xAs 1−x-layers were grown by molecular beam epitaxy with a nitrogen concentration ranging from low N-doping concentration in GaAs up to GaN. The average nitrogen concentration was assessed by secondary ion mass spectrometry and energy dispersive X-ray spectrometry. X-ray diffraction measurements provided two peaks from the grown layer, one arising from a lattice constant close to the GaAs(004) and one close to the GaN(004) diffraction, due to phase-separation. Scanning electron microscopy indicated a rough surface structure with improved smoothing for low and high nitrogen concentrations. Crystallite features were observed on the rough surfaces and characterised by Auger-electron spectroscopy.
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