Abstract
Nucleating diamond on iridium buffer layers by the bias enhanced nucleation procedure causes a characteristic roughening of the Ir(0 0 1) surface. Shape, dimensions and crystallographic alignment of the formed structures can be controlled by the methane concentration in the plasma. Different processes are discussed which contribute to their formation. After a short growth step, epitaxial diamond crystals are found with areal densities of 10 11 cm −2. Transmission electron microscopy images show that coalescence of these grains starts already after few minutes of growth at a film thickness of 10 nm. By using epitaxial iridium films consisting of a mixture of (0 0 1)- and (1 1 1)-oriented iridium domains, it was possible to show that (0 0 1)- and (1 1 1)-oriented epitaxial diamond grains can be nucleated with similar high densities under exactly identical process conditions.
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