Abstract
We report a systematic modification of thin YBa2Cu3Oy films with a scanning tunneling microscope. The samples include YBa2Cu3Oy films on MgO(001) and YBa2Cu3Oy/PrBa2Cu3Oy bilayer films on SrTiO3 (001). The bias voltage of the tip was kept negative and varied from −600 to −1200 mV. The tip was operated in a constant tunneling current mode with tunneling current 0.3–0.7 nA and scanning rate 1 Hz. Modification of the surface begins with nucleation of holes, or at the edge of a dislocation or protrusion on the surface, and is achieved by successively scanning a fixed area. We show the image obtained from an atomic force microscope which can help us look into the mechanism of the modification.
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