Abstract
AbstractFour different layers of various silicon, carbon and nitrogen contents on the Ti6Al4V alloy and (001)Si wafers have been deposited by means of Plasma Assisted Chemical Vapor Deposition (PACVD) method. The layers were obtained from reactive gas mixture containing SiH4, CH4, NH3 and Ar. After deposition the structure and chemical composition of modified surfaces have been analyzed with use of SEM/EDS technique. Based on these results and thermodynamic calculations, the diffusion coefficients, D, for nitrogen and carbon in alloy were discussed. Scratch test shown that silicon carbonitride layers have good adhesion to metal surface. In order to determine atomic structure of obtained layers, FTIR spectra for layer-(001)Si and layer-Ti6Al4V were registered.
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