Abstract
A study has been made on the wettability, structure, and chemical states of ion implanted silicone rubbers. C +, N 2 +, O 2 +, and Ar + ion implantations were performed at energies of 50 and 100 keV at room temperature. The fluences ranged from 10 12 to 10 17 ions/cm 2. Ion implantation caused the surface roughness to increase 2–3 times. Wettability was estimated by means of the sessile drop method using water, of which the results showed that the contact angle of water decreased from 98.9° to 48° as the fluence increased. The results of XPS measurements showed that implanted elements formed a Gaussian-like distribution, host elements were redistributed and no change in binding energies of O 1s, C 1s and Si 2p occurred. Results of FT-IR-ATR showed that ion implantation broke up original chemical bonds to form new radicals, the amounts of which are related to the fluences. It is concluded that the change in wettability may be caused by formation of new radicals rather than roughening of the surface under ion implantation.
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