Surface modification of silicon wafer by low-pressure high-frequency plasma chemical vapor deposition method

H Kataoka,Y Kiyota,D Uesugi,Y Suzaki,N Kashihara,N Mungkung,K Sakai,H Akatsuka,K Nakabayashi,T Bouno,T Yuji,M Kawano,H Shibata

doi:10.1109/deiv.2010.5625758

Surface modification of silicon wafer by low-pressure high-frequency plasma chemical vapor deposition method

H Kataoka, Y Kiyota + Show 11 more

https://doi.org/10.1109/deiv.2010.5625758

Copy DOI

Publication Date: Aug 1, 2010

Citations: 7

Affiliation: Minami Kyushu University, Minami Kyushu Junior College, University of Miyazaki, Kagawa University, King Mongkut's University of Technology Thonburi, Tokyo Institute of Technology, National Institute of Technology, Hiroshima College

#Plasma Chemical Vapor Deposition Method #Si Wafer Surface + Show 8 more

Abstract
Full-Text PDF
Similar Papers

Abstract

The writers are developing the production process device of thin-film material for the flexible solar cells using the high-frequency plasma chemical vapor deposition (CVD) method. In order to clarify the characteristics of the device, plasma treatment is applied on the Si wafer surface and basic characteristic of plasma is found by the analysis of the B doped p-type (100) Si wafer surface using X-ray photoelectron spectroscopy (XPS) and contact angle measuring gauge.

Full Text

Paper version not known

Open DOI Link

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Similar Papers

Paper Title

Journal

Date

Author

View more papers

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.