Abstract
Polytetrafluoroethylene (PTFE) surface was modified for improving hydrophilicity by ion irradiation in environmental gas of <TEX>$N_2$</TEX> and <TEX>$NH_3$</TEX>, respectively. The water contact angle onto the PTFE surface increased from <TEX>$104{\circ}$</TEX> to over <TEX>$140{\circ}$</TEX> by Ar ion irradiation in <TEX>$N_2$</TEX> gas. In the case of <TEX>$NH_3$</TEX> as environmental gas, there were a slight increase of contact angle from ion dose of <TEX>$1{\times}10^{15}\;to\;5{\times}10^{15}\;ions/cm^2$</TEX>, and its dramatic decrease to the value of 35o at the conditions of ion dose higher than <TEX>$1{\times}10^{16}\;ions/cm^2$</TEX>. It was found from SEM results that the surface morphology of PTFE was changed into one with filament structure after Ar ion irradiation in <TEX>$N_2$</TEX> gas environments. On the contrary, Ar ion irradiation in <TEX>$NH_3$</TEX> gas condition induced the PTFE surface with network structure. Hydrogen ion irradiation resulted in a little change of PTFE surface morphology, comparing with the case of Ar ion irradiation. The water contact angle of hydrogen ion irradiated PTFE surface in reactive gas decreased with increment of ion dose. Hydrogen ion irradiation could improve hydrophilicity with little change of surface morphology. It might be considered from FT-IR results that the improvement in wettability of PTFE surface by ion irradiation in <TEX>$N_2$</TEX> and <TEX>$NH_3$</TEX> gases could be due to the hydrophilic groups of NHx bonds.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.