Abstract
An effective passivation of the surface states in n-GaAs has been achieved by high energy (50 MeV) silicon ion irradiation at a fluence of 1×1013 ions cm−2. The effect of passivation on the nature of defects has been studied by the technique of thermally stimulated exoelectron emission (TSEE) measurements. Consequently an enhancement in the intensity of the band edge, photoluminescence (PL) has also been noticed. The results of TSEE and PL measurements are augmented by surface analysis using x-ray photoelectron spectroscopy. An effective migration of silicon was observed from the buried layer towards the surface by radiation enhanced outdiffusion process. A stable passivating layer of silicon dioxide was found on GaAs surface which has been accounted for the enhancement in the PL intensity.
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