Abstract
Shallow nitrogen ion doping of synthetic type Ib diamond crystals with a hydrogen-terminated (1 0 0) surface was carried out with a 40-eV mass-separated 14N + ion beam at three ion dose strengths (3.3×10 12, 3.3×10 13 and 4.8×10 14 ions/cm 2). The effects of the dose strength on the electrical state of the diamond surface were investigated. The diamond surface was characterized by X-ray photoelectron spectroscopy (XPS), and nitrogen was determined to be bonded to carbon in a sp 3 manner. The work functions were determined from the XPS photoemission cutoff and valence band spectrum. The work function of the hydrogen-terminated Ib (1 0 0) surface (4.5 eV before irradiation, 3.9 eV after irradiation at 3.3×10 12 ions/cm 2) decreased with increasing ion dose strength owing to a defect-related energy state. We believe that, at a dose strength of 3.3×10 12 ions/cm 2, a new energy state is formed by displacement of nitrogen.
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