Surface Modification for WSe2 Based Complementary Electronics* *Supported by the National Key Research and Development Program of China (Grant Nos. 2018YFA0703704 and 2018YFB0406603), the National Natural Science Foundation of China (Grant Nos. 61851403, 51872084, 61704052, 61811540408, 51872084, and 61704051), the Key Research and Development Plan of Hunan Province (Grant No. 2018GK2064), and the Natural Science Foundation of Hunan Province (Grant

Abstract

High-performance WSe2 complementary transistors are demonstrated on an individual flake by ozone exposure, which relies on the charge transfer mechanism. This technology is readily feasible for modulating the conductivity type in WSe2, and the p–n junction presents a high on-off ratio of 104. Based on robust p-type transistors and matched output current of n-type WSe2 transistors, the complementary inverter achieves a high voltage gain of 19.9. Therefore, this strategy may provide an avenue for development of high-performance complementary electronics.