Surface modification by plasmas: X-ray photoemission studies

Abstract

Multilevel metallization schemes and ultra-large-scale integration of silicon devices require plasma-based pattern transfer processing. During plasma-based pattern transfer, the silicon surface is subjected to ion bombardment and can be coated with thin residue layers of species from the plasma, producing a damaged layer. The chemistry of the residue layer depends upon the plasma composition, system geometry, and substrate material. X-ray photoemission spectroscopy (XPS) has been used extensively to characterize plasma-induced residue layers. Various plasma etch and processing residues observed during silicon device pattern transfer will be discussed.