Abstract
Indium sulfide (In2S3) thin films were prepared by chemical bath deposition method in same deposition conditions, and then doped by metals including Ag, Al and Cu. Produced films post annealed at 400 °C temperature about 1 h. The effects of different metal-doping on structural, morphological and optical properties of the films were investigated by means of X-ray diffraction, scanning electron microscopy, atomic force microscopy and UV–Vis spectroscopy analyses. Produced indium sulfide thin film was amorphous and doping process lead to shifts peaks in lower angles. Morphology and nanostructure of doped films changed completely. Compact doped films have been formed. Optical constants of the produced thin films were calculated using Kramers–Kronig relations on reflectivity curves. Different doping impurities changed optical curves and band gaps.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
