Abstract
The growth of discontinuous oxide crystallites on copper and silver proceeds by condensation of oxygen atoms on the boundaries of the crystallites; at first the oxygen atoms migrate on the surface of the free metal. Metal atoms also diffuse on the surface during the process of oxidation; ditch-wall systems were observed on the boundaries of the crystallites by interference microscopy. These systems must migrate during the growth of the crystallites. If the discontinuous Cu 2O is thermally reduced in hydrogen, hydrogen atoms are migrating over the metal surface, and they react with the oxide when they contact the interface.
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