Surface microstructure of GeSbSe chalcogenide thin films grown at oblique angle

Abstract

Surface analysis of GeSbSe chalcogenide thin films grown at normal incidence and at four different oblique evaporation angles (45°, 75°, 80°, and 85°) was performed by a combination of scanning electron microscopy and atomic force microscopy. Additionally, quantitative roughness and microstructural analyses of the GeSbSe chalcogenide thin films were performed. Increasing roughness and surface area for increasingly oblique evaporation angle were observed, following an exponential relationship in both cases. Two-dimensional power spectral density analysis further supported the exponential behavior of the surface characteristic feature size. The notable increase of roughness and surface area with increasing evaporation oblique angle can have a significant effect on the further development of optical sensors.