Abstract
Scanning tunneling microscope images show that a smoother surface and heterointerface can be obtained in a GaAs/Si grown with Al0.5Ga0.5As/Al0.55Ga0.45P intermediate layers (AlGaAs/AlGaP ILs), which result from a two-dimensional growth at an initial stage. By using the AlGaAs/AlGaP ILs, the device characteristics are improved; a saturation electron velocity of 1.6×107 cm/s for a GaAs metal-semiconductor field-effect transistor, and an internal quantum efficiency of 83%, an intrinsic mode loss coefficient of 23 cm−1, a differential gain coefficient of 1.9 cm/A, and a transparency current of 266 A/cm2 for a single quantum-well laser diode.
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