Abstract
The surface loss probability of H radicals was investigated in SiH4/H2 plasma using vacuum ultraviolet resonance absorption spectroscopy. The surface loss probability was calculated from the decay curve of the H radical density in the plasma afterglow and increased with the SiH4 flow rate. Silicon thin films deposited on the chamber wall were analyzed to investigate the relation between the surface loss probability and the surface condition. The surface reaction of H radicals is influenced by deposition precursors, such as SiH3 radicals. The density of H radicals significantly decreased with heating of the chamber wall up to 473 K. The surface loss probability of H radicals was estimated to be ca. 1 at 473 K. Quantitative measurements of the surface loss probability of H radicals in SiH4/H2 plasma are expected to be particularly important for understanding the surface reactions that occur during the deposition of silicon thin films.
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