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Abstract
The morphological behavior of model static surfaces of compound semiconductors, as well as dynamic growth fronts relaxing towards their equilibrium behavior upon termination of growth, is studied via Monte Carlo simulations based upon the configuration-dependent reactive incorporation model. It is found that anion desorption, cation migration, and surface reconstruction play a crucial role in controlling the surface morphology and their interplay can explain the experimentally observed dependence of morphology on the substrate temperature.
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