Abstract
Cubic GaN layers are grown by molecular beam epitaxy on (0 0 1)GaAs substrates. The influence of intentional deviations from stoichiometric growth conditions on the structural homogeneity of the epitaxial layers and the GaN/GaAs interface was studied. Optical micrographs and AFM-images of the epilayers grown in a Ga-stabilised regime reveal the existence of different types of surface irregularities. We conclude that the irregularities observed are the result of successively melt-back etching in GaN and GaAs and solution growth within Ga-droplets due to the change of the saturation conditions of the liquid Ga-phase on the surface of the growing film.
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