Abstract
Investigations of the laser excited GaAs(110) surface with angle resolved, picosecond laser photoemission have revealed a previously unobserved valley of the C3 surface band. The valley minimum is at the X̄ point in the surface Brillouin zone and resides within the band gap at this location. Electron population in this valley increases only as a result of scattering from the directly photoexcited valley at Γ̄. With high momentum resolution we have been able to isolate the dynamic electron population changes at both Γ̄ and X̄ and deduced the scattering time between the two valleys.
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Schedule a callMore From: Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena
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