Abstract
The interaction between Sb and As is investigated by scanning tunneling microscopy of InAs (001) surfaces. Sb roughens the surface by increasing the coverage of divots (vacancy clusters) and two dimensional islands, which both possess a c(4 × 4) reconstruction. ab initio total energy calculations predict that the As-terminated β2(2 × 4) transforms into In-Sb heterodimer terminated c(4 × 4) configurations with increasing Sb chemical potential, which causes the roughening by pulling atoms from the terrace. Thus we propose an alternative model for interfacial broadening by intermixing rather than by surface segregation.
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