Abstract
Semiconductor-based photodetectors (PDs) convert light signals into electrical signals via a photon–matter interaction process, which involves surface/interface carrier generation, separation, and transportation of the photo-induced charge media in the active media, as well as the extraction of these charge carriers to external circuits of the constructed nanostructured photodetector devices. Because of the specific electronic and optoelectronic properties in the low-dimensional devices built with nanomaterial, surface/interface engineering is broadly studied with widespread research on constructing advanced devices with excellent performance. However, there still exist some challenges for the researchers to explore corresponding mechanisms in depth, and the detection sensitivity, response speed, spectral selectivity, signal-to-noise ratio, and stability are much more important factors to judge the performance of PDs. Hence, researchers have proposed several strategies, including modification of light absorption, design of novel PD heterostructures, construction of specific geometries, and adoption of specific electrode configurations to modulate the charge-carrier behaviors and improve the photoelectric performance of related PDs. Here, in this brief review, we would like to introduce and summarize the latest research on enhancing the photoelectric performance of PDs based on the designed structures by considering their surface/interface engineering and how to obtain advanced nanostructured photo-detectors with improved performance, which could be applied to design and fabricate novel low-dimensional PDs with ideal properties in the near future.
Highlights
In recent years, following the developmental step forward of microelectronics technology, optoelectronic technology, as one of burgeoning advanced technologies, has developed rapidly and will have far-reaching effects on the lives of human beings
Compared with the classical photodetector devices with bulk materials, improved photoelectric conversion performance could be realized in constructed nanostructured photodetectors though from light absorption, photon charge carrier generation, and collection of contributing electronic signals, the field of which researchers have paid more and more attention
From the conclusion of the literature review, it could be illustrated that compared with film and bulk materials, low-dimensional nanostructures have the advantages of unique conductivity caused by high quality of crystal and carrier mobility and a confined carrier transport channel; they are much more suitable candidate materials in assembling high-performance PDs on a large scale [34]
Summary
In recent years, following the developmental step forward of microelectronics technology, optoelectronic technology, as one of burgeoning advanced technologies, has developed rapidly and will have far-reaching effects on the lives of human beings. Compared with the classical photodetector devices with bulk materials, improved photoelectric conversion performance could be realized in constructed nanostructured photodetectors though from light absorption, photon charge carrier generation, and collection of contributing electronic signals, the field of which researchers have paid more and more attention.
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