Abstract
The surface reactivity of CF2 radicals during plasma processing of Si and 304 stainless steel substrates measured using the imaging of radicals interacting with surfaces (IRIS) technique are reported. The molecular beam source is a 100% CHF3 plasma. Under IRIS conditions, an amorphous fluorocarbon film is deposited on each substrate. Simulation of crosssectional data shows CF2 surface reactivities of -0.65 ± 0.03 on silicon and -0.63 ± 0.03 on stainless steel. The effect of reduced ion bombardment during plasma processing on the surface generation of CF2 radicals is also examined.
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