Surface-hardening effect of B implantation in 6H-SiC ceramics

Abstract

This study was conducted on the surfacehardening effect of boron ion implantation in 6H-SiC ceramics. The SiC samples prepared by pressureless sintering were carefully polished, and 500 keV B+ implanted in 6H-SiC ceramics at room temperature and four implantation doses, namely, 1×1015, 5×1015, 1×1016, and 5×1016 cm−2, were chosen. The implanted samples were analyzed by scanning electron microscope and Raman spectra. The Vickers hardness of the samples was evidently increased. The thickness of the damage layer was about 1 μm, which is consistent with the simulated results. The structure of the damage layer was different from the internal part and severely damaged at high doses.