Abstract
The atomic layer deposition method allows for the production of a thin film with a high aspect ratio on the uneven surface of titanium dioxide nanotubes TiO2(Nt). A modified BiFeO3/TiO2(Nt)/Ti (BFOT) structure with controllable electrical characteristics was obtained. BFOT possesses both ferroelectric and semiconductor properties with nonlinear conductivity dependent on the magnitude and duration of the voltage supply. Analysis of the temperature dependence of charge variation showed leakage currents in the BFOT structure due to the capture and release of charge carriers from defect levels. Surface modification of nanotubes with the multiferroic BiFeO3 allows for the creation of semiconductors with adaptive functional properties.
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