Abstract
We have established a chemical beam epitaxy technology for the growth of λ = 1.55 μm GaInAsP/InP surface emitting laser wafers by confirming the controllability of composition and thickness, and doping conditions. We investigated the optical and electrical properties of Be-doped InP, necessary for obtaining good surface morphology and low electrical resistance. The crystal quality was characterized by making stripe lasers, and the growth of GaInAsP/InP multilayer reflectors was attempted. Also, the first lasing of 1.5 μm surface emitting lasers has been demonstrated by chemical beam epitaxy (CBE) and a very low threshold was realized using a hybrid mirror.
Published Version
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