Abstract
We realize the first distributed feedback surface emitting laser diode with Al0.3Ga0.7As/GaAs multilayered heterostructure both by optical pumping and current injection. Sharp stimulated emission is observed at the selected wavelength determined by the optical cavity. Lateral p–n junction is formed by a selective Zn diffusion. The threshold current is 120 mA at 150 K with the active layer thickness of 6 μm and width of 3 μm. The temperature coefficient of the lasing wavelength is equal to a conventioal DFB laser diode. Anomalous mixing is found in the course of Zn diffusion and succeeding thermal treatment.
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Schedule a callMore From: Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena
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