Surface electronic structure studies of GaAs (110)

Abstract

Angle-resolved photoemission using synchrotron radiation from GaAs (110) has been studied in conjunction with tight binding calculations of the surface electronic structure. Emission from two new surface resonances−which were predicted to exist only for a relaxed surface-have been identified near the edges of the surface Brillouin zone at ? and ?′. Also, measurements of the dispersion of the As-derived surface state near the valence band maximum, first reported elsewhere, have been extended from ? to the zone edge ? and a band width of 0.6 eV has been determined. All of these observations, including those reported elsewhere of intrinsic surface states on GaAs (110) are accounted for by a tight binding model calculation for a relaxed surface (∠19° bond angle rotation).