Surface electronic structure of heavily-ion-implanted and laser-annealed Si single crystals.

Abstract

This paper presents angle-resolved photoemission spectroscopy data of the core lines of a heavily implanted and laser-annealed Si(100) surface. For the first time unambiguous data show that the laser-annealing process induces an almost complete reconstruction of the inner-layer electronic structure, whereas the outermost layers preserve the behavior of the ion-implanted surface. Ab initio electronic structure calculations performed on a ${\mathrm{Si}}_{\mathrm{n}}$${\mathrm{H}}_{3\mathrm{n}\mathrm{\ensuremath{-}}3}$ cluster strongly indicate that the modifications observed are due to the loss of coordination of the Si atoms, which is recovered after laser annealing only in the inner layers.