Abstract
The electronic structure of a Si(111)4 × 1-In surface has been studied by angle-resolved photoelectron spectroscopy (ARPES). Using a 1.1° off-axis Si(111) wafer as substrate, a single-domain Si(111)4 × 1-In surface has been prepared in order to determine the dispersion of surface state (SS) without the obscurity arising from multi-oriented 4 × 1 domains. Three SSs that cross the Fermi level have been found. Thus, the Si(111)4 × 1-In surface is concluded to be metallic. The dispersions of the metallic SS appeared to be almost one-dimensional, suggesting one-dimensional metallic bonds among In atoms. Completely occupied SSs have been also found. The characteristics of SSs are discussed in relation to the existing structural models for the Si(111)4 × 1-In surface.
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