Abstract
The intrinsic electronic surface states of (110) GaAs 1− x P x> are predicted as functions of alloy composition x. For x > x c ≈ 0.05, intrinsic states are found within the fundamental gap. The minimum energy of the surface band is primarily determined by the bulk electronic structure, not by the atomic relaxation at the surface.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
