Abstract
AbstractX‐ray photoemission spectroscopy is utilised to determine the variation in surface Fermi level pinning across the composition range of n‐ and p‐type c ‐plane Inx Ga1–x N alloys. The pinning relative to the charge neutrality level is used to explain a change in band bending direction causing a transition from surface electron accumulation (In‐rich) to depletion (Ga‐rich) at x ≈ 0.43 for n‐type alloys and a transition from surface inversion to hole depletion at x ≈ 0.59 for p‐type alloys where downward band bending occurs across the composition range. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
