Abstract
In order to clarify the applicability of the low-temperature (LT) GaAs layer grown by MBE to planar integration as well as to gain insights into its electrical conduction mechanism, its surface electrical conduction behavior is studied for the first time by performing current-voltage ( I- V), capacitance-voltage ( C- V) and photoluminescence (PL) measurements on planar and sandwich type samples. It is shown that the LT layer exhibits hopping related conduction at low fields, and shows surface breakdown with S-type negative resistance at high fields. The surface breakdown field strength is found to be 7–10 times higher than that of the normal LEC material. A surface breakdown mechanism involving surface state filling and screening of surface state charge by As precipitates is proposed.
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