Abstract
AbstractWe investigated effects of surface preparation in doping silicon wafers using proximity rapid thermal diffusion (RTD). This process uses a spin-on-dopant (SOD) as an evaporating source for doping processed wafers. Various cleaning processes were used to study formation of the dopant glass on the silicon wafers during RTD. Doping was evaluated by sheet resistance measurements, dopant profiling using SIMS analyses, carrier distributions using spreading resistance profiling (SRP) or anodic oxidation, and was complemented by the composition analyses of the SOD deposited on the source wafers and of the dopant glass formed on the target wafers using Fourier Transform Infrared Spectroscopy (FTIR) in the transmission and reflection modes, respectively. It was found that the influence of the cleaning steps is much stronger in low temperature doping processes than at high temperatures. In addition, the temperature effect related to the wafer size was also an important factor in determining the doping efficiency in this RTDs.
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