Abstract
Abstract We study the coarsening of two-dimensional crystalline islands on the (001) face of GaAs, InAs and GaSb after deposition at typical growth conditions in molecular beam epitaxy. The time-resolved island/pit size distributions are measured in situ using synchrotron X-ray diffraction and are analyzed together with the diffraction intensity oscillations during deposition. Whereas the deposition kinetics is similar for the three materials, they strongly differ in the coarsening. During coarsening, the mean correlation length grows proportional to t n. GaAs shows coarsening exponents around n = 1 and an exponential island size distribution, in clear contrast to the behavior of InAs and GaSb, where we find coarsening closer to the expected Ostwald ripening behavior (n between 1/3 and 1/2) on InAs and extremely slow kinetics on GaSb.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
More From: Zeitschrift für Kristallographie - Crystalline Materials
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.