Surface dynamics dominated by bulk thermal defects: The case ofNiAl(110)

Abstract

We find that small temperature changes cause steps on the $\mathrm{NiAl}(110)$ surface to move. We show that this step motion occurs because mass is transferred between the bulk and the surface as the concentration of bulk thermal defects (i.e., vacancies) changes with temperature. Since the change in an island's area with a temperature change is found to scale strictly with the island's step length, the thermally generated defects are created (annihilated) very near the surface steps. To quantify the bulk/surface exchange, we oscillate the sample temperature and measure the amplitude and phase lag of the system response, i.e., the change in an island's area normalized to its perimeter. Using a one-dimensional model of defect diffusion through the bulk in a direction perpendicular to the surface, we determine the migration and formation energies of the bulk thermal defects. During surface smoothing, we show that there is no flow of material between islands on the same terrace and that all islands in a stack shrink at the same rate. We conclude that smoothing occurs by mass transport through the bulk of the crystal rather than via surface diffusion. Based on the measured relative sizes of the activation energies for island decay, defect migration, and defect formation, we show that attachment/detachment at the steps is the rate-limiting step in smoothing.