Abstract
In this work, using first principles study, we report the structure, formation energy, electronic, optical and photocatalytic properties of a series of nonmetal atoms doped monolayer GeSe. O doped GeSe have the lowest formation energy (-1.73 eV). H, F, Cl, Br and I doped GeSe can absorb almost all sunlight. H and F doping reduced the photogenerated charge carrier recombination rate of GeSe by 1.28 and 1.84 times, respectively. H, F, Cl, Br and I doping enhances the oxidizability of photogenerated holes by more than 1.14 eV. This work provides an important guidance to design more efficient GeSe-based photocatalyst.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
