Abstract
Indium vanadate (InVO4) gas sensors were fabricated by depositing InVO4 nanoribbons aqueous suspension onto ceramic substrates. Their resistances distinctively increased in the detection of ammonia and propylamine, indicating an n-to-p semiconductor transition. This novel phenomenon of the InVO4-based sensor may be ascribed to the surface doping effect: electrons were trapped by H2O and O2 and produced OH(-) and O2(-) on the InVO4 surface, which resulted in holes overcompensation in the InVO4 valence band. Moreover, the sufficiently large surface-to-volume ratio of these nanoribbons enables fast carrier transfer on the sensor surface. The InVO4 nanoribbons-based sensors had optimum performance at room temperature and enjoyed good restorability. They also had great response to a wide range of target gas concentration, with ultrahigh sensitivities up to 1100% for ammonia and 760% for propylamine.
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