Abstract
The surface diffusion characteristics of Bi2Sr2CuO6+x thin films grown by molecular beam epitaxy (MBE) on tilted SrTiO3(001) substrates have been investigated by using insitu reflection high energy electron diffraction (RHEED) and atomic force microscopy (AFM). The periodic intensity oscillations corresponded to 1/2 unit layer-by-layer growths have been observed for low growth temperatures and high growth rates, while periodic oscillations disappeared with increasing growth temperature and/or decreasing growth rate. The decrease of RHEED oscillation indicates that the growth mode changes, from two dimensional (2-D) nucleation growth to step-flow mode.
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