Abstract
The surface core level shifts (SCLS) of the Cd and Te 4d levels in the compound semiconductor CdTe have been measured. Values of 0.24 ± 0.05 eV for Cd and −0.26 ± 0.05 eV for Te were obtained. These results cannot be explained solely by the reduction in the Madelung potential at the surface; other factors are at least as important. We also show that SCLS can be related to heats of segregation of n-type impurities via a Born-Haber cycle.
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