Abstract
GaAs(100) was immersed in water and aqueous mixtures of isopropyl alcohol, ethylene glycol, acetic acid, glycolic acid, tartaric acid, and HCl with and without the addition of H2O2 to understand the etching mechanism. The surface composition after etching was characterized using x-ray photoelectron spectroscopy (XPS) and temperature programmed desorption (TPD). Ga and As oxides with high oxidation states dissolve in water, but acids are needed to remove the oxides with low oxidation states. H2O2 oxidized the bulk substrate, and only the acids that have pKa values lower than 4 supported etching. After etching with HCl, the surface is terminated by arsenic chloride (As-Cl).
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