Surface chemistry of dimethyl cadmium and dimethyl tellurium at 295 K

Abstract

Surface reactions of dimethyl cadmium and dimethyl tellurium on Au, GaAs(100), Si(100), and SiO 2 substrates at 295 K have been investigated. These studies followed UHV procedures and used X-ray photoelectron spectroscopy to characterize the chemical state of the surface reaction products. The results showed that both dimethyl cadmium and dimethyl tellurium form physisorbed and dissociatively chemisorbed adspecies with the specific reaction product distribution depending on the substrate. The sticking coefficient for dimethyl tellurium on GaAs was two orders of magnitude less than that for dimethyl cadmium. These observations are discussed in terms of simple electron transfer and covalent mechanisms for the surface interaction.