Abstract
The formation of step bunching was observed by atomic force microscopy on n-type Si(111) surfaces during the electrodeposition of noble metals under semiconductor depletion conditions. The surface chemical analysis performed by synchrotron radiation photoelectron spectroscopy (SRPES) indicates the formation of an ultra-thin oxide film along with the topological transformation. Step bunching is interpreted in terms of site-specific etching controlled by the reactivity of kink sites and step edges together with the surface accumulation of holes supplied by the reduction of Pt-chloride complexes via the valence band.
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