Surface chemical electronics at the semiconductor surface

Abstract

Thin film disposition, etching, and cleaning, all of which constitute core of the semiconductor manufacturing process, are governed by surface phenomena that the semiconductor surface features in the gaseous phase and the liquid phase. Essential factors to reveal phenomena of the semiconductor surface are dielectric constant and energy level (Fermi level, redox potential) of media which come in contact with the surface, and energy level (electronegativity) of atoms to terminate dangling bonds of the surface. The energy state of molecules adsorbed on the surface of the solid material is greatly different from that of molecules isolated in the gaseous phase as it is affected by the dielectric constant of the solid material. What determines the surface phenomena is the transfer of electrons through the semiconductor surface, between semiconductor/terminating atoms and adsorbed molecules/contacting media. The energy level concept is popular in the solid state physics. On the other hand, electronegativity of atoms and the redox potential of solutions are among the concept which is popular in the chemical field. The author has selected the title ‘Surface Chemical Electronics of Semiconductor’ for this article as it discusses these two different concepts in an integrated manner.