7-days of FREE Audio papers, translation & more with Prime
7-days of FREE Prime access
7-days of FREE Audio papers, translation & more with Prime
7-days of FREE Prime access
https://doi.org/10.1016/j.apsusc.2024.159327
Copy DOIJournal: Applied Surface Science | Publication Date: Jan 6, 2024 |
Citations: 6 |
β gallium oxide (β-Ga2O3) is an ultrawide bandgap semiconductor with great potential for solar-blind ultraviolet detection, power devices, and gas sensing. However, the understanding of the surface properties of β-Ga2O3 remains insufficient. Here, epitaxial growth of β-Ga2O3 films was carried by metal–organic chemical vapor deposition (MOCVD) on sapphire substrates. The surface chemical composition, surface layer crystalline properties, and surface morphology of the β-Ga2O3 films were discussed and analyzed in detail. By comparing the atomic ratios of O/Ga, the surface morphology, and the crystalline properties of the films, we attribute the component of O 1s with the binding energy around 531.8 eV to surface lattice O atoms. Moreover, the one-dimensional defects inside the surface layers and the near-interface regions of the films were observed at atomic scale by high resolution transmission electron microscopy (HRTEM). By comparing the lattice fringes of different facets, the geometric phase uniformity, and the distribution of strain, we found that the crystalline quality of the surface layers is much higher than the near-interface regions.
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.