Abstract
The effect of interface charges on the channel conductance in MOS transistors has been investigated. It has been found that, by measuring the conductance as a function of temperature, it is possible to determine both the "fixed" interface charge which is independent of the surface potential and the charge trapped in surface states whose occupancy is a function of the surface potential. The characteristics of the two charge components are discussed. It appears that neither a continuous nor a delta-function energy distribution alone is adequate to describe the observed surface-state density.
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