Abstract
Surface-charge-layer sheet resistance (SCL-RSH) current-voltage differential measurements on ring-gate metal-insulator-semiconductor field-effect transistor structures are proposed as an alternative to S-parameter transmission line and capacitance-voltage measurements to evaluate the interface RF losses on high-resistivity-silicon substrates. Argon implantation is employed to amorphize the silicon surface, thus increasing the SCL-RSH. The RF attenuation decreases as RSH increases, if other microwave losses (substrate, metallization, and radiation losses) are kept at the same low level. Full suppression of the surface losses is achieved for high-dose implants, giving SCL-RSH ~ 6.0·107 Ω□, minimum RF losses and voltage independent behavior of both parameters.
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