Abstract
Surface charge analysis (SCA) was used to characterize the interface properties of very thin chemical vapor deposited (CVD) thermal and thermal films on Si. The thickness dependence of flatband charge indicates that negative charge exists at the interface, while a positive charge exists in the bulk of the film. The interface state density, for as-deposited was found to be almost identical to a clean, bare Si surface, and degraded upon exposure to clean room ambient. Degradation during the process of wafer loading into a low pressure CVD furnace was more severe, a factor of four increase in was seen. Annealing in forming gas was found to be effective for reducing For and films, high-temperature annealing in was found to be effective for reducing both and Hole traps and positive were observed in whereas electron traps and negative were seen in © 2004 The Electrochemical Society. All rights reserved.
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