Abstract
AbstractThe basic structure used in most of the electronic devices is the metal-insulator-semiconductor structure. Nowadays, the principal objective is to reduce dimension of the structure and it involves a very low insulating layer thickness. Based on insulating layer thickness, MIS devices can be classified into three categories, viz., MIS capacitor, Schottky barrier diode, and MIS tunnel diode. Also, for a metal-insulator-semiconductor (MIS) device, the current–voltage characteristics (I–V measurement) critically depend on the insulator thickness. It is well known that current–voltage (I–V) measurement provide a significant determination of insulating layer thickness. In this present work, three types of silicon-based MIS structures (0.9 mm diameter, 1.5 m diameter, and 1.9 mm diameter) are fabricated by E-beam technique and their electrical characteristics are graphically plotted in two conditions, viz., metal grounded and silicon grounded. Using I–V graphical plots, \(\frac{1}{A}\) versus ln I0 (I0 = Diode reverse saturation current) characteristics are shown to classify the fabricated MIS structures. The results show that MIS devices of diameter up to 1.5 mm behave like Schottky diode.KeywordsMIS structureE-beam techniqueSchottky diodeTunnel current
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