Abstract
AbstractCuSn thin films were deposited by the radio‐frequency (RF) magnetron co‐sputtering method on Si(100) with Cu and Sn metal targets with various RF powers. The thickness of the films was fixed at 200 ± 10 nm. The synthesized CuSn thin films mainly consisted of Cu20Sn6 and Cu39Sn11 phases, which was revealed by an X‐ray diffraction (XRD) study. The high‐resolution Cu 2p XPS and Cu LMM Auger electron spectra indicate that metallic Cu oxidized to Cu+ and Cu2+ as the RF power on Cu target increased. The atomic ratios of Sn0 and Sn4+ decreased, while that of Sn2+ increased with increasing RF power on the Cu target. The polar surface free energy (SFE) component has a different tendency in comparison with the total SFE and the dispersive SFE component. The dispersive SFE component was the dominating contributing factor to the total SFE compared with the polar SFE. Copyright © 2016 John Wiley & Sons, Ltd.
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