Abstract
SiC is a promising material for high-power electronic devices and has been an increasingly attractive research subject. In this study, we focused on the surface functionalization of SiC at the atomic level using a femtosecond laser. The laser irradiation was performed in air, nitrogen gas, and vacuum ambient, and the effect of the ambient on the surface modification was discussed. When the irradiation was performed in nitrogen gas ambient, oxidation of the SiC surface decreased.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.