Abstract
SiC is a promising material for high-power electronic devices and has been an increasingly attractive research subject. In this study, we focused on the surface functionalization of SiC at the atomic level using a femtosecond laser. The laser irradiation was performed in air, nitrogen gas, and vacuum ambient, and the effect of the ambient on the surface modification was discussed. When the irradiation was performed in nitrogen gas ambient, oxidation of the SiC surface decreased.
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